1. T. Hauffman, O. Blajiev, J. Snauwaert, C. van Haesendonck, A. Hubin, H. Terryn, “Study of the self-assembling of n-octylphosphonic acid layers on aluminum oxide”, Langmuir, 2008, 24 (23), 13450.2. B. M. Silverman, K. A. Wieghaus, J. Schwartz, “Comparative properties of siloxane vs phosphonate monolayers on a key titanium alloy”, Langmuir, 2005, 21 (1), 225.3. W. Gao, L. Reven, “Solid-state NMR-studies of self-assembled monolayers”, Langmuir, 1995, 11 (6), 1860.4. E. L. Hanson, J. Schwartz, B. Nickel, N. Koch, M. F. Danisman, “Bonding self-assembled, compact organophosphonate monolayers to the native oxide surface of silicon”, J. Am. Chem. Soc., 2003, 125 (51), 16074.5. J. T. Woodward, A. Ulman, D. K. Schwartz, “Self-assembled monolayer growth of octadecylphosphonic acid on mica”, Langmuir 1996, 12 (15), 3626.6. A. Raman, M. Dubey, I. Gouzman and E. S. Gawalt, “Formation of self-assembled monolayers of alkylphosphonic acid on the netive oxide surface of SS316L E Langmuir, 2006, 22, 6469.7. R. Quinones and E. S. Gawalt, “Polystyrene formation on monolayer-modified nitinol effectively controls corrosion”, Langmuir, 2008, 24, 10858.8. S. C. D’Andrea and Al. Y. Fadeev, “Covalent surface modification of calcium hydroxyapatite using n-alkyl- and n-fluoroalkylphosphonic acids”, Langmuir, 2003, 19, 7904.9. B. Zhang, T. Kong, W. Xu, R. Su, Y. Gao and G. Cheng, “Surface functionalization of zinc oxide by carboxyalkylphosphonic acid self-assembled monolayers”, Langmuir, 2010, 26(6), 4514.10. A. Sharma, B. Kippelen, P. J. Hotchkiss and S. R. Marder, “Stabilization of the work function of indium tin oxide using organic surface modifiers in organic light-emitting diodes”, Appl. Phys. Lett., 2008, 93, 163308.11. A. Pulsipher, N. P. Westcott, W. Luo, and M. N. Yousaf, “Rapid in situ generation of two patterned chemoselective surface chemistries from a single hydroxy-terminated surface using controlled microfluidic oxidation”, J. Am. Chem. Soc., 2009, 131 (22), 7626.12. J. Schwartz, M. J. Avaltroni, M. P. Danahy, B. M. Silverman, E. L. Hanson, J. E. Schwarzbauer, K. S. Midwood, E. S. Gawalt, “Cell attachment and spreading on metal implant materials”, Mater. Sci. Eng. C, 2003, 23, 395.
Dojindo,11-AUPA/100/A517,氧化钛膜上形成 11-HUPA 的 SAM 以修饰荧光分子
膦酸衍生物用于氧化金属如Al2O31)、TiO22)、ZrO23)、SiO24)、Mica5)、不锈钢(SS316L)6)、镍钛诺7)、羟基磷灰石8)、ZnO9)、ITO10、11)的表面改性。长期以来，有机硅烷被用于在金属氧化物上形成自组装单分子层（SAM）。然而，由于试剂之间的稳定性和聚合性差，在应用中并不总是适用。另一方面，膦酸衍生物同样在金属氧化物上形成SAM，尽管它们是非常稳定的化合物。此外，据报道，膦酸衍生物使用形成比有机硅烷更稳定和致密的 SAM。施瓦茨等。人。表明当在氧化钛膜上形成 11-HUPA 的 SAM 以修饰荧光分子时，膦酸盐 SAM 在碱性溶液中的稳定性和密度是有机硅烷的四倍。膦酸衍生物机械地结合到氧化钛膜上的高密度，因为膦酸衍生物通过质子转移到基材产生 OH，而有机硅烷仅与氧化钛膜中存在的 OH 基团反应12)。