标签：膦酸衍生物同样在金属氧化物上形成SAM

Dojindo,ODPA/100/O407,膦酸衍生物同样在金属氧化物上形成SAM

膦酸衍生物用于氧化金属的表面改性，如 Al2O31)、TiO22)、ZrO23)、SiO24)、Mica5)、不锈钢(SS316L)6)、镍钛诺7)、羟基磷灰石8)、AgO9)、ZnO10)、ITO11、12 ). 长期以来，有机硅烷一直被用于在金属氧化物上形成自组装单层 (SAM)。 然而，由于试剂之间的稳定性和聚合性差，在应用中并不总是适用。 另一方面，膦酸衍生物同样在金属氧化物上形成SAM，尽管它们是非常稳定的化合物。 此外，据报道，膦酸衍生物使用形成比有机硅烷更稳定和致密的 SAM。 克劳克等。 人。 和 Sekitani 等。 人。 显示 Al2O3 上的烷基膦酸酯 SAM 比三氯硅烷衍生物 SAM 作为有机晶体管的导体膜更有用13）。

1) T. Hauffman, O. Blajiev, J. Snauwaert, C. van Haesendonck, A. Hubin, H. Terryn,  EStudy of the self-assembling of n-octylphosphonic acid layers on aluminum oxide E Langmuir, 2008, 24 (23), 13450.2) B. M. Silverman, K. A. Wieghaus, J. Schwartz, “Comparative properties of siloxane vs phosphonate monolayers on a key titanium alloy E Langmuir, 2005, 21(1), 225.3) W. Gao, L. Reven, “Solid-state NMR-studies of self-assembled monolayers E Langmuir 1995, 11 (6), 1860.4) E. L. Hanson, J. Schwartz, B. Nickel, N. Koch, M. F. Danisman, “Bonding self-assembled, compact organophosphonate monolayers to the native oxide surface of silicon E J. Am. Chem. Soc. 2003, 125 (51), 16074.5)J. T. Woodward, A. Ulman, D. K. Schwartz, “Self-assembled monolayer growth of octadecylphosphonic acid on mica E Langmuir 1996, 12 (15), 3626.6)A. Raman, M. Dubey, I. Gouzman and E. S. Gawalt, “Formation of self-assembled monolayers of alkylphosphonic acid on the netive oxide surface of SS316L E Langmuir, 2006, 22, 6469.7) R. Quinones and E. S. Gawalt, “Polystyrene formation on monolayer-modified nitinol effectively controls corrosion E Langmuir, 2008, 24, 10858.8) S. C. D’Andrea and Al. Y. Fadeev, “Covalent surface modification of calcium hydroxyapatite using n-alkyl- and n-fluoroalkylphosphonic acids EB>, Langmuir, 2003, 19, 7904.9) Y. T. Tao, C. Y. Huang, D. R. Chiou, L. J. Chens, “Infrared and atomic force microscopy imaging study of the reorganization of self-assembled monolayers of carboxylic acids on silver surface E Langmuir, 2002, 18, 8400.10) B. Zhang, T. Kong, W. Xu, R. Su, Y. Gao and G. Cheng, “Surface functionalization of zinc oxide by carboxyalkylphosphonic acid self-assembled monolayers E Langmuir, 2010, 26(6), 4514.11) A. Sharma, B. Kippelen, P. J. Hotchkiss and S. R. Marder, “Stabilization of the work function of indium tin oxide using organic surface modifiers in organic light-emitting diodes E Appl. Phys. Lett., 2008, 93, 163308.12) A. Pulsipher, N. P. Westcott, W. Luo, and M. N. Yousaf, “Rapid in situ generation of two patterned chemoselective surface chemistries from a single hydroxy-terminated surface using controlled microfluidic oxidation E J. Am. Chem. Soc., 2009, 131(22), 762613) a) H. Klauk, U. Zschieschang, J. Pflaum, M. Halik,  E/SPAN>Ultralow-power organic complementary circuits E Nature, 2007, 445, 745. b) T. Sekitani, Y. Noguchi, U. Zschieschang, H. Klauk, T. Someya, “Organic transistors manufactured using inkjet technology with subfemtoliter accuracy E Proc. Natl. Acad. Sci. USA, 2008, 105, 4976

Dojindo,FHPA/100/F340,膦酸衍生物同样在金属氧化物上形成SAM

Structural FormulaProduct Description膦酸衍生物用于氧化金属的表面改性，如 Al2O31)、TiO22)、ZrO23)、SiO24)、Mica5)、不锈钢(SS316L)6)、镍钛诺7)、羟基磷灰石8)、AgO9)、ZnO10)、ITO11、12 ). 长期以来，有机硅烷一直被用于在金属氧化物上形成自组装单层 (SAM)。然而，由于试剂之间的稳定性和聚合性差，在应用中并不总是适用。另一方面，膦酸衍生物同样在金属氧化物上形成SAM，尽管它们是非常稳定的化合物。此外，据报道，膦酸衍生物使用形成比有机硅烷更稳定和致密的 SAM。克劳克等。人。和 Sekitani 等。人。显示 Al2O3 上的烷基膦酸酯 SAM 比三氯硅烷衍生物 SAM 作为有机晶体管的导体膜更有用13)。Sharma 等。人。已经报道了通过氧等离子体处理或用含有全氟烷基的膦酸（FOPA）修饰ITO衬底来增加ITO衬底的功函数。然而，提高的功函数水平在 FOPA 改性衬底上保持 246 小时，而在氧等离子体处理的衬底上功函数立即降低 11)。此外，使用具有 FOPA 的改性 TO 制造的有机薄膜太阳能电池提高了光强度、驱动电压和寿命的稳定性。有三种不同烷基长度的全氟膦酸可供选择。

1) T. Hauffman, O. Blajiev, J. Snauwaert, C. van Haesendonck, A. Hubin, H. Terryn,  EStudy of the self-assembling of n-octylphosphonic acid layers on aluminum oxide E Langmuir, 2008, 24 (23), 13450.2) B. M. Silverman, K. A. Wieghaus, J. Schwartz, “Comparative properties of siloxane vs phosphonate monolayers on a key titanium alloy E Langmuir, 2005, 21(1), 225.3) W. Gao, L. Reven, “Solid-state NMR-studies of self-assembled monolayers E Langmuir 1995, 11 (6), 1860.4) E. L. Hanson, J. Schwartz, B. Nickel, N. Koch, M. F. Danisman, “Bonding self-assembled, compact organophosphonate monolayers to the native oxide surface of silicon E J. Am. Chem. Soc. 2003, 125 (51), 16074.5)J. T. Woodward, A. Ulman, D. K. Schwartz, “Self-assembled monolayer growth of octadecylphosphonic acid on mica E Langmuir 1996, 12 (15), 3626.6)A. Raman, M. Dubey, I. Gouzman and E. S. Gawalt, “Formation of self-assembled monolayers of alkylphosphonic acid on the netive oxide surface of SS316L E Langmuir, 2006, 22, 6469.7) R. Quinones and E. S. Gawalt, “Polystyrene formation on monolayer-modified nitinol effectively controls corrosion E Langmuir, 2008, 24, 10858.8) S. C. D’Andrea and Al. Y. Fadeev, “Covalent surface modification of calcium hydroxyapatite using n-alkyl- and n-fluoroalkylphosphonic acids Estrong>, Langmuir, 2003, 19, 7904.9) Y. T. Tao, C. Y. Huang, D. R. Chiou, L. J. Chens, “Infrared and atomic force microscopy imaging study of the reorganization of self-assembled monolayers of carboxylic acids on silver surface E Langmuir, 2002, 18, 8400.10) B. Zhang, T. Kong, W. Xu, R. Su, Y. Gao and G. Cheng, “Surface functionalization of zinc oxide by carboxyalkylphosphonic acid self-assembled monolayers E Langmuir, 2010, 26(6), 4514.11) A. Sharma, B. Kippelen, P. J. Hotchkiss and S. R. Marder, “Stabilization of the work function of indium tin oxide using organic surface modifiers in organic light-emitting diodes E Appl. Phys. Lett., 2008, 93, 163308.12) A. Pulsipher, N. P. Westcott, W. Luo, and M. N. Yousaf, “Rapid in situ generation of two patterned chemoselective surface chemistries from a single hydroxy-terminated surface using controlled microfluidic oxidation E J. Am. Chem. Soc., 2009, 131(22), 762613) a) H. Klauk, U. Zschieschang, J. Pflaum, M. Halik,  E/span>Ultralow-power organic complementary circuits E Nature,2007, 445, 745. b) T. Sekitani, Y. Noguchi, U. Zschieschang, H. Klauk, T. Someya, “Organic transistors manufactured using inkjet technology with subfemtoliter accuracy E Proc. Natl. Acad. Sci. USA, 2008, 105, 4976